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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

    Buy cheap TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS from wholesalers
     
    Buy cheap TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS from wholesalers
    • Buy cheap TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS from wholesalers

    TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

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    Brand Name : Anterwell
    Model Number : TK10P60W
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 10000pcs
    Delivery Time : 1 day
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    TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS


    MOSFETs Silicon N-Channel MOS (DTMOS)

    TK10P60W


    Applications

    • Switching Voltage Regulators


    Features

    (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)

    by used to Super Junction Structure : DTMOS

    (2) Easy to control Gate switching

    (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)


    Packaging and Internal Circuit


    Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)

    CharacteristicsSymbolRatingUnit
    Drain-source voltageVDSS600V
    Gate-source voltageVGSS±30V
    Drain current (DC) (Note 1)ID9.7A
    Drain current (pulsed) (Note 1)IDP38.8A
    Power dissipation (Tc = 25℃)PD80W
    Single-pulse avalanche energy (Note 2)EAS121mJ
    Avalanche currentIAR2.5A
    Reverse drain current (DC) (Note 1)IDR9.7A
    Reverse drain current (pulsed) (Note 1)IDRP38.8A
    Channel temperatureTch150
    Storage temperatureTstg-55 to 150

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Note

    1: Ensure that the channel temperature does not exceed 150℃. Note

    2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A


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