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200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

Anterwell Technology Ltd.
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    Buy cheap 200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF from wholesalers
     
    Buy cheap 200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF from wholesalers
    • Buy cheap 200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF from wholesalers

    200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

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    Brand Name : Anterwell
    Model Number : IRFP260NPBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9200pcs
    Delivery Time : 1 day
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    200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF


    IRFP260NPbF HEXFET® Power MOSFET


    • Advanced Process Technology

    • Dynamic dv/dt Rating

    • 175°C Operating Temperature

    • Fast Switching

    • Fully Avalanche Rated

    • Ease of Paralleling

    • Simple Drive Requirements

    • Lead-Free


    Description

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.



    Absolute Maximum Ratings

    ParameterMax.Units
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V50A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V35A
    IDMPulsed Drain Current200A
    PD @TC = 25°CPower Dissipation300A
    Linear Derating Factor2.0W/°C
    VGSGate-to-Source Voltage±20V
    EASSingle Pulse Avalanche Energy560mJ
    IARAvalanche Current50A
    EARRepetitive Avalanche Energy30mJ
    dv/dtPeak Diode Recovery dv/dt10V/ns
    TJ, TSTGOperating Junction and Storage Temperature Range-55 to +175°C
    Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
    Mounting torque, 6-32 or M3 srew10 lbfïin (1.1Nïm)

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