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IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

Anterwell Technology Ltd.
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    Buy cheap IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic from wholesalers
     
    Buy cheap IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic from wholesalers
    • Buy cheap IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic from wholesalers

    IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

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    Brand Name : Anterwell
    Model Number : IRFP9240PBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9000pcs
    Delivery Time : 1 day
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    IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic


    IRFP9240, SiHFP9240

    Power MOSFET


    FEATURES

    • Dynamic dV/dt Rating

    • Repetitive Avalanche Rated

    • P-Channel

    • Isolated Central Mounting Hole

    • Fast Switching

    • Ease of Paralleling

    • Simple Drive Requirements

    • Lead (Pb)-free Available


    PRODUCT SUMMARY

    VDS (V)- 200 V
    RDS(on) (Max.) (Ω)VGS = - 10 V0.50
    Qg (Max.) (nC)44
    Qgs (nC)7.1
    Qgd (nC)27
    ConfigurationSingle

    DESCRIPTION

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.


    The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.


    ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

    PARAMETERSYMBOLLIMITUNIT
    Drain-Source VoltageVDS- 200V
    Gate-Source VoltageVGS± 20V
    Continuous Drain CurrentVGS at - 10 VTC = 25 °CID- 12A
    TC = 100 °C- 7.5
    Pulsed Drain Current aIDM-48A
    Linear Derating Factor1.2W/°C
    Single Pulse Avalanche Energy bEAS790mJ
    Repetitive Avalanche Current aIAR- 12A
    Repetitive Avalanche Energy aEAR15mJ
    Maximum Power DissipationTC = 25 °CPD150W
    Peak Diode Recovery dV/dt cdV/dt- 5.0V/ns
    Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150°C
    Soldering Recommendations (Peak Temperature)for 10 s300 d°C
    Mounting Torque6-32 or M3 screw10lbf·in
    1.1N·m

    Notes

    a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

    b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, RG = 25 Ω, IAS = - 12 A (see fig. 12).

    c. ISD ≤ - 12 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

    d. 1.6 mm from case.


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