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Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device

Anterwell Technology Ltd.
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    Buy cheap Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device from wholesalers
     
    Buy cheap Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device from wholesalers
    • Buy cheap Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device from wholesalers

    Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device

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    Brand Name : Anterwell
    Model Number : 74HC585D
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal
    Supply Ability : 2200PCS
    Delivery Time : 1 Day
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    Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device

    Original IC Electronic Components 74HC585D Dual AND OR Gate CMOS Device


    74HC58 Dual AND-OR gate


    FEATURES

    • Output capability: standard

    • ICC category: SSI


    GENERAL DESCRIPTION

    The 74HC58 is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard no. 7A.


    The “58” provides two sections of AND-OR gates. One section contains a 2-wide, 3-input (1A to 1F) AND-OR gate and the second section contains a 2-wide, 2-input (2A to 2D) AND-OR gate.


    QUICK REFERENCE DATA

    SYMBOLPARAMETERCONDITIONSTYPICAL HCUNIT
    tPHL/ tPLH

    propagation delay

    1n to 1Y

    2n to 2Y

    CL = 15 pF;

    VCC = 5 V

    11 9

    ns

    ns

    CIinput capacitance3.5pF
    CPDpower dissipation capacitance per gatenotes 1 and 218pF

    Notes

    1. CPD is used to determine the dynamic power dissipation (PD in µW): PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in V ∑ (CL × VCC2 × fo) = sum of outputs


    2. For HC the condition is VI = GND to VCC



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