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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

Anterwell Technology Ltd.
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    Buy cheap N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor from wholesalers
     
    Buy cheap N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor from wholesalers
    • Buy cheap N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor from wholesalers

    N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

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    Brand Name : Anterwell
    Model Number : 2SK3561
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8200pcs
    Delivery Time : 1 day
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    N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor



    N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

    2SK3561

    Switching Regulator Applications

    • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
    • High forward transfer admittance: |Yfs| = 6.5S (typ.)
    • Low leakage current: IDSS = 100 μA (VDS = 500 V)
    • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

    Absolute Maximum Ratings (Ta = 25°C)

    CharacteristicsSymbolRatingUnit
    Drain-source voltageVDSS500V
    Drain-gate voltage (RGS = 20 kΩ)VDGR500V
    Gate-source voltageVGSS±30V
    Drain currentDC (Note 1)ID8A
    Pulse (t = 1 ms) (Note 1)IDP32A
    Drain power dissipation (Tc = 25°C)PD40W
    Single pulse avalanche energy (Note 2)EAS312mJ
    Avalanche currentIAR8A
    Repetitive avalanche energy (Note 3)EAR4mJ
    Channel temperatureTch150°C
    Storage temperature rangeTstg-55~150°C

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

    Thermal Characteristics

    CharacteristicsSymbolMaxUnit
    Thermal resistance, channel to caseRth (ch-c)3.125°C/W
    Thermal resistance, channel to ambientRth (ch-a)62.5°C/W

    Note 1: Ensure that the channel temperature does not exceed 150℃.
    Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
    Note 3: Repetitive rating: pulse width limited by maximum channel temperature
    This transistor is an electrostatic-sensitive device. Please handle with caution.


    Weight : 1.7 g (typ.)


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