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FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

Anterwell Technology Ltd.
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    Buy cheap FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET from wholesalers
     
    Buy cheap FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET from wholesalers
    • Buy cheap FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET from wholesalers

    FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

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    Brand Name : Anterwell
    Model Number : FQPF10N20C
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7800pcs
    Delivery Time : 1 day
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    FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET


    FQP10N20C/FQPF10N20C
    200V N-Channel MOSFET

    General Description
    These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

    Features
    • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
    • Low gate charge ( typical 20 nC)
    • Low Crss ( typical 40.5 pF)
    • Fast switching
    • 100% avalanche tested
    • Improved dv/dt capability


    Absolute Maximum Ratings TC = 25°C unless otherwise noted

    SymbolParameterFQP10N20CFQPF10N20CUnits
    VDSSDrain-Source Voltage200V
    ID

    Drain Current - Continuous (TC = 25°C)

    - Continuous (TC = 100°C)

    9.59.5 *A
    6.06.0 *A
    IDMDrain Current - Pulsed (Note 1)3838 *A
    VGSSGate-Source Voltage± 30V
    EASSingle Pulsed Avalanche Energy (Note 2)210mJ
    IARAvalanche Current (Note 1)9.5A
    EARRepetitive Avalanche Energy (Note 1)7.2mJ
    dv/dtPeak Diode Recovery dv/dt (Note 3)5.5V/ns
    PD

    Power Dissipation (TC = 25°C)

    - Derate above 25°C

    7238W
    0.570.3W/°C
    TJ, TSTGOperating and Storage Temperature Range-55 to +150°C
    TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds300°C

    * Drain current limited by maximum junction temperature.

    Package Dimensions

    TO-220

    TO-220F



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