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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

Anterwell Technology Ltd.
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    Buy cheap RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs from wholesalers
     
    Buy cheap RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs from wholesalers
    • Buy cheap RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs from wholesalers

    RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

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    Brand Name : Anterwell
    Model Number : RFP70N06
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8300pcs
    Delivery Time : 1 day
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    RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs


    RFG70N06, RFP70N06, RF1S70N06SM

    70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs


    These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

    Formerly developmental type TA49007.


    Features

    • 70A, 60V

    • rDS(on) = 0.014Ω

    • Temperature Compensated PSPICE® Model

    • Peak Current vs Pulse Width Curve

    • UIS Rating Curve (Single Pulse)

    • 175oC Operating Temperature

    • Related Literature

    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


    Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

    PARAMETERSYMBOL

    RFG70N06, RFP70N06

    RF1S70N06SM

    UNITS
    Drain to Source Voltage (Note 1)VDSS60V
    Drain to Gate Voltage (RGS = 20kΩ) (Note 1)VDGR60V
    Continuous Drain CurrentID70A
    Pulsed Drain Current (Note 3)IDMRefer to Peak Current Curve
    Gate to Source VoltageVGS±20V
    Single Pulse Avalanche RatingEASRefer to UIS CurveA
    Power DissipationPD150W
    Linear Derating Factor1.0W/℃
    Operating and Storage TemperatureTJ, TSTG-55 to 175

    Maximum Temperature for Soldering

    Leads at 0.063in (1.6mm) from Case for 10s

    Package Body for 10s, See Techbrief 334


    TL

    Tpkg


    300

    260


    CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


    NOTE: 1. TJ = 25oC to 150℃


    Symbol

    Packaging


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