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FQP50N06 Power Mosfet Transistor npn general purpose transistor

    Buy cheap FQP50N06 Power Mosfet Transistor npn general purpose transistor from wholesalers
     
    Buy cheap FQP50N06 Power Mosfet Transistor npn general purpose transistor from wholesalers
    • Buy cheap FQP50N06 Power Mosfet Transistor npn general purpose transistor from wholesalers
    • Buy cheap FQP50N06 Power Mosfet Transistor npn general purpose transistor from wholesalers

    FQP50N06 Power Mosfet Transistor npn general purpose transistor

    Ask Lasest Price
    Brand Name : Anterwell
    Model Number : FQP50N06
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7800pcs
    Delivery Time : 1 day
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    FQP50N06 Power Mosfet Transistor npn general purpose transistor


    Stock Offer (Hot Sell)

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    FQP50N06L

    60V LOGIC N-Channel MOSFET


    General Description

    These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

    This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.


    Features

    • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V

    • Low gate charge ( typical 24.5 nC)

    • Low Crss ( typical 90 pF)

    • Fast switching

    • 100% avalanche tested

    • Improved dv/dt capability

    • 175°C maximum junction temperature rating


    Absolute Maximum Ratings TC = 25°C unless otherwise noted

    SymbolParameterFQP50N06LUnits
    VDSSDrain-Source Voltage60V
    ID

    Drain Current - Continuous (TC = 25°C)

    - Continuous (TC = 100°C)

    52.4A
    37.1A
    IDMDrain Current - Pulsed (Note 1)210A
    VGSSGate-Source Voltage± 20V
    EASSingle Pulsed Avalanche Energy (Note 2)990mJ
    IARAvalanche Current (Note 1)52.4A
    EARRepetitive Avalanche Energy (Note 1)12.1mJ
    dv/dtPeak Diode Recovery dv/dt (Note 3)7.0V/ns
    PD

    Power Dissipation (TC = 25°C)

    - Derate above 25°C

    121W
    0.81W/°C
    TJ, TSTGOperating and Storage Temperature Range-55 to +175°C
    TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds300°C


    Package Dimensions

    TO-220


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